APTGT400A60D3G APTGT400A60D3G ? rev 1 march, 2011 www.microsemi.com 1-5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 500 i c continuous collector current t c = 80c 400 i cm pulsed collector current t c = 25c 800 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 1250 w rbsoa reverse bias safe operating area t j = 125c 800a @ 520v these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 2 1 3 5 q2 7 6 q1 4 v ces = 600v i c = 400a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? high level of integration ? m6 power connectors benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant phase leg trench + field stop igbt3 power module
APTGT400A60D3G APTGT400A60D3G ? rev 1 march, 2011 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 500 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 400a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 6.4 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 24 c oes output capacitance 1.5 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.75 nf q g gate charge v ge =15v, i c =400a v ce =300v 4.2 c t d(on) turn-on delay time 110 t r rise time 50 t d(off) turn-off delay time 490 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 400a r g = 1.5 50 ns t d(on) turn-on delay time 130 t r rise time 60 t d(off) turn-off delay time 530 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 400a r g = 1.5 70 ns t j = 25c 3.2 e on turn on energy t j = 150c 3.4 t j = 25c 15 e off turn off energy v ge = 15v v bus = 300v i c = 400a r g = 1.5 t j = 150c 15.5 mj i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 2000 a reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 500 i rrm maximum reverse leakage current v r =600v t j = 150c 750 a i f dc forward current tc = 80c 400 a t j = 25c 1.6 2 v f diode forward voltage i f = 400a v ge = 0v t j = 150c 1.5 v t j = 25c 125 t rr reverse recovery time t j = 150c 180 ns t j = 25c 18.8 q rr reverse recovery charge t j = 150c 39.5 c t j = 25c 4.4 e rr reverse recovery energy i f = 400a v r = 300v di/dt =4800a/s t j = 150c 9.6 mj
APTGT400A60D3G APTGT400A60D3G ? rev 1 march, 2011 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.12 r thjc junction to case thermal resistance diode 0.20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 125 c for terminals m6 3 5 torque mounting torque to heatsink m6 3 5 n.m wt package weight 350 g d3 package outline (dimensions in mm) 1 a dtail a
APTGT400A60D3G APTGT400A60D3G ? rev 1 march, 2011 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =150c 0 100 200 300 400 500 600 0 0.5 1 1.5 2 2.5 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =9v 0 100 200 300 400 500 600 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 200 400 600 800 567891011 v ge (v) i c (a) energy losses vs collector current eon eoff err 0 5 10 15 20 25 30 35 0 200 400 600 800 i c (a) e (mj) v ce = 300v v ge = 15v r g = 1.5 ? t j = 150c eon eoff err 0 5 10 15 20 25 30 35 02.557.510 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 400a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 200 400 600 800 1000 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =1.5 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt
APTGT400A60D3G APTGT400A60D3G ? rev 1 march, 2011 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =150c 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 20 40 60 80 0 100 200 300 400 500 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =1.5 ? t j =150c t c =85c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode microsemi reserves the right to change, without notice, the specifications and info rmation contained herein
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